| 摘要 |
A sub-surface interconnection structure for coupling an n-type diffusion to a p-type diffusion. The structure is a conductor-filled trench disposed between the diffusion regions. The trench has a thin dielectric layer on its sidewalls and bottom. The conductor within the trench contacts the diffusion regions. Parasitic device formation between the diffusion regions is suppressed because the trench provides a parasitic gate that is shorted to the parasitic source regions (i.e., the coupled diffusion regions). Moreover, the trench provides an enlarged contact to the coupled diffusion regions for the subsequently-applied metal layer.
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