| 摘要 |
PURPOSE:To increase resistance to environments and at the same time, reduce laser power required for recording and deletion by specifying the flow ratio Q of hydrocarbon in an atmosphere of rare gas and hydrocarbon gas with a target of Ge, Te alloy of specific composition, and forming a recording layer using sputtering technique. CONSTITUTION:Gex,Te100-x (5<=x<=20atomic%) alloy is placed as a sputtering source 24 facing a substrate 12 at the inner bottom of a vacuum container 17, and air is discharged from the container with pumps 18, 19. Next, argon gas is introduced into the container from a gas line 20 and CH4 gas from a gas line 21 so that the mixture ratio Q of CH4 is 5%<=Q<=35%. Thus the container is maintained at a specified internal pressure level. Then power is applied to the sputtering source 24 for a specified time while the substrate 12 is rotated. The amount of sputtered elements supplied from the sputtering source is monitored by a monitoring device 25, and the power charged into the sputtering source is adjusted so that the monitored amount reaches a specified value. Consequently, a recording layer 13 is formed on the substrate 12 and the growth of a film is stopped if the film becomes thicker as specified. |
