| 摘要 |
PURPOSE:To increase resistance to environments and at the same time, reduce required laser power for recording and deletion by specifying the flow ratio Q of hydrocarbon in an atmosphere of rare gas and hydrocarbon gas with Sb, Te, Ge alloy of specific composition as target, forming a recording layer using sputtering technique, and sandwiching the recording layer with dielectric films. CONSTITUTION:After air is exhausted from a container with pumps 18, 19, argon gas is introduced into the container from a gas line 20 and an SiO2 protecting film 14 is laminated on a substrate using sputtering technique. Next, air is exhausted from the container and CH4 gas is introduced into the container from a gas line 21 with argon gas so that the mixture ratio Q of CH4 gas is 5%<=Q<=35%. Then power is applied, for a specified time, to a sputtering source 24 where (SbTe1-x)y Ge1-y(0.05<=x<=0.7, 0.4<=y<=0.8) alloy is placed, while the substrate 12 is rotated. The amount of sputtered elements from the sputtering source is monitored with a monitoring device 25, and during this monitoring operation, power supply is adjusted. Consequently, a recording layer 13 is formed on the substrate 12. Furthermore, an SiO2 protecting film 14 is laminated on the recording layer 13 to form an information recording medium. |
