摘要 |
PURPOSE:To increase resistance to environments and at the same time, reduce required laser power for recording and deletion by specifying the flow ratio Q of hydrocarbon in an atmosphere of rare gas and hydrocarbon with a target of Sb, Ge, Te of specific composition, and forming a recording layer by sputtering technique. CONSTITUTION:(SbTe1-x)yGe1-x (0.05<=x<=0.74<=y<=0.8) is placed as a sputtering source 24 facing a substrate 12, and air is exhausted from the container with pumps 18, 19. Next argon gas is introduced into the container from a gas line 20 and CH4 from a gas line 21 so that the mixture ratio Q of CH4 is 5%<=Q<=50%. Thus the container is maintained at a specified internal pressure level. Then power is applied to the sputtering source 24 for a specified time while the substrate 12 is rotated. The amount of sputtered elements from the sputtering source is monitored with a monitoring device 25, and power is adjusted so that the monitored amount reaches a specified value. Subsequently, a recording layer 13 is formed on the substrate 12. When the film thickness reaches a specified thickness, the film formation is stopped. |