| 摘要 |
PURPOSE:To remarkably simplify the construction, by using an overflow drain electrode, an overflow control gate electrode, and a transfer gate in common with a CCD shift register electrode. CONSTITUTION:On a P type Si substrate 1, an N type layer 2 as a buried CCD, an N type layer 3 as a photo diode, and an N type layer 21 is an overflow drain are formed, and a P type layer 5 as channel stopper is formed. The layer 21 and a CCD shift register transfer electrode 11 are electrically connected and the layer 3 and the drain 21 are parted via a region 22. The upper part of the region 22 is covered with the electrode 11 via an insulation film 8. The layers 2 and 3 are separated via a substrate region 6 and the upper part of the region 6 is provided with a transfer electrode 13 via the film 8. Further, the upper part of the layer 2 is provided with the electrodes 11 and 13 via the film 8, and transfer electrodes 12 and 14 are provided between the electrodes 11 and 13 via an insulation film 16. Thus, electrodes and wirings can be saved. |
