| 摘要 |
PURPOSE:To obtain a composition for forming a negative type micropattern suitable for manufacture of a transistor as well as IC, LSI, and VLSI, by using a photosensitive composition consisting of a straight-chain polymer and an azide compd. having strong absorption in a UV wavelength region. CONSTITUTION:A negative type micropattern-forming photosensitive composition consists of a straight-chain polymer and an azide compd. grafting with said azid compd. on being activated especially by irradiation of 300-450nm wavelength light. A homopolymer or a copolymer of one or at least 2 of a group of methyl isopropenyl ketone, methyl vinyl ketone, methyl methacrylate, butyl methacrylate, and glycidyl methacrylate is used for said straight-chain polymer. A desirable mol.wt. range of this polymer is in few tens of thousands - 2mu, especially, few hundreds of thousands - one million. A desirable amount of azide compd. added is 5-50wt%, especially 15-30wt%. |
