FLAT METHOD OF TRANCH CAPACITOR

摘要

Trench capacitor is prepared by forming a trench, depositing a polysilicon onto a substrate, etching the polysilicon layer (2) to leave it at a constant thickness after oxidizing the polysilicon on the substrate, and then etching the oxidation film by using a wet or dry etching method. Accordingly, the trench capacitor in which the polysilicon is planarised is obtained.