Semiconductor arrangement

摘要

In a semiconductor arrangement containing an n-p-n transistor, a p-type substrate, an n-type buried layer for low-resistance connection of the collector zone of the n-p-n transistor, and further containing a p-n-p transistor whose emitter zone is formed by the base zone of the n-p-n transistor, whose base zone is formed by the collector zone of the n-p-n transistor, whose collector zone is formed by the substrate, the buried layer is designed in such a way that it does not substantially affect the gain characteristics of the p-n-p transistor.