| 摘要 |
PURPOSE:To prevent bending of the wafer of a light emitting diode so as to manufacture a device easily and, at the same time, to enlarge the light emitting area of the diode so as to obtain a large light emitting quantity by forming epitaxial films on the side faces of a prismatic substrate crystal. CONSTITUTION:Epitaxial films are formed on the side faces of a prismatic substrate crystal. For instance, after forming photoresists at parts corresponding to islands of 500X500mum each on a GaAs water having a thickness of 500mum, the substrate is etched to a depth of 200mum by reactive etching and SiNx films having a thickness of about 0.5mum are formed after the wafer is set to a plasma CVD device and the side faces of the islands are removed. Then AlxGa1-xAs films are formed on the side faces of the islands by dipping the water in a solution containing 400g of Ga, 1g of Al, and 24g of GaAs in a dipping device for 30 minutes. Therefore, a high-luminance light emitting diode having a wide light emitting area can be obtained easily without bending the substrate wafer. |
