| 摘要 |
<p>The choice of appropriate dimensions for a transition structure (ÜV) in a conductor-path layout on a thin-film substrate, the transition structure connecting the closely spaced conductor paths (LA) in the region of the heating elements (RH) with the widely spaced conductor paths (LB) in the region of the bonded contacts, enables the conductor-path input resistance (Li) to be made as uniform as possible, at the same time keeping it low. This is achieved by establishing a dimension-determination specification which, for a given set of input data, i.e. the conductor-path widths (da, db) and gap widths (Sa, Sb) in the two zones, and the gap width (Sv) in the transition structure (ÜV), gives the conductor width (dv) in the transition structure as the output.</p> |
