| 摘要 |
PURPOSE:To reduce the deterioration of electric characteristics caused by light by a method wherein amorphous silicon system semiconductor is used which is stabilized by intermittently projecting light including visible rays of high illuminance, under a high temperature atmosphere at 150 deg.C or more. CONSTITUTION:By sputtering or reactive sputtering wherein silicon or silicon system compound is used as target, a silicon system amorphous semiconductor thin film is formed. Then by intermittently projecting light including visible rays of high illuminance under a high temperature atmosphere at 150 deg.C or more, a stabilized amorphous silicon system semiconductor device is obtained. Irradiation pulse light of 10W/cm or more, or preferably 100W/cm or more is used. Irradiation time of one pulse is ordinarily 1/10sec or less. The pulse light is ordinarily visible rays or ultraviolet rays. Since this a-Si system semiconductor device is stable for light, it can be used for a solar cell and a photo sensor. |
