| 摘要 |
The invention relates to an integrated circuit comprising a vertical transistor having an emitter comprising at least one zone (12), a base (2) having a base contacting region (15) adjoining a major surface of the integrated circuit, and a collector (5). An improved inverse current amplification is obtained in the case in which the overall thickness of the base is less than or equal to the diffusion length of the minority charge carriers in these regions, when the ratio between the surface Sx of a base contacting region (15) and the surface SM of a base contact window region is at least equal to 10, and when the base contacting region (15) has a surface smaller than 5 times that of the emitter region. |
