| 摘要 |
PURPOSE: To allow the surfaces of first and second semiconductor layers to be one surface by forming the layer of a second semiconductor onto a substrate provided with a recessed part at a place where a first semiconductor is not masked, removing this layer excepting for the neighborhood of the recessed part and ultrasonic-cleaning it integrally with the mask so as to remove the residual part of the layer of a second semiconductor layer which is not positioned within the recessed part. CONSTITUTION: GaAs layers are grown on the surface of a substrate 102 covered with an oxide 108 and on a surface within the recessed part of the substrate 102 which is not covered with an oxide. Photoresist 112 applied onto the GaAs layers 104 and 106 is made a pattern to cover the recessed part provided with an overlapped part on the oxide 108. The GaAs layers 104 and 106 are etched by using this photoresist 112. The oxide 108 is etched by BELL 2 (solution of HF+NH4 F). The GaAs layers 104 and 106 are crushed at a thin neck part 114 by this etching. The crushed pieces are ultrasonic-cleaned to remove GaAs 106 supported by the part 114 in cantilever. Thus a planarized surface is formed.
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