| 摘要 |
<p>PURPOSE: To improve a yield by forming a doped semiconductor layer within a multilayer structure as a layer extended on an intrinsic semiconductor, transforming a part on the channel region of this semiconductor layer to a high resistance part and isolating a source contact region and a drain contact region from each other by this high resistance part. CONSTITUTION: An n<+> -type amorphous silicon layer 18 is extended as a single continuous layer across a whole part between window 22 and 24 on a gate electrode 12 to form a channel region by the reverse region of an intrinsic amorphous silicon layer 16. Next, the region on the gate electrode of the layer 18 is doped and annealing is performed. Dopants to be used include p<+> -type dopant, and doping is performed at a selected level until the doped part 30 of the layer 18 has a sufficiently high resistance of a selected level at which any conduction is blocked between regions constituting the source/drain regions of the layer 18, to isolate a source contact region and a drain contact region by this part. Thereby the yield is improved.</p> |
