| 摘要 |
<p>Formation of contact apertures through a layer of insulating material. According to the invention, an etching attack is undertaken in a first layer (12) of insulating material, through a mask, to define apertures (19a, 19b) which are preferably incompletely etched, the mask is removed, a second layer (21) is deposited and a second etching attack is undertaken, without mask, until contact zones on the elements (14, 15) are cleared. <IMAGE></p> |
