| 发明名称 |
A method of etching thin indium tin oxide films. |
| 摘要 |
<p>Precise patterns of thin indium tin oxide films deposited on a substrate are obtained by subjecting these films to a patterned reactive ion etching in an atmosphere consisting of disassociated argon. Line widths and spacings in the order as little as 2-4 mu m or less may be readily produced.</p> |
| 申请公布号 |
EP0375066(A1) |
申请公布日期 |
1990.06.27 |
| 申请号 |
EP19890203247 |
申请日期 |
1989.12.18 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
ROSSI, BARBARA;MITRA, UDAYANATH |
| 分类号 |
C23F4/00;C04B41/50;C04B41/53;C04B41/87;C04B41/91;H01B5/14;H01B13/00;H01L21/302;H01L21/3065;H01L31/04;H01L31/18;H05K3/02 |
主分类号 |
C23F4/00 |
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