发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To obtain an input buffer which is of low power consumption and of an SiECL level by forming a circuit constituted of a switching stage to level-shift input with a diode and a buffer stage to perform push-pull operation by using mainly an enhancement type FET. CONSTITUTION:The input of the switch stage is level-shifted by the diode D, and supplied to a gate, and the enhancement type FET Tr2 is driven, and the enhancement type FET Tr4 of the buffer stage is driven through a depletion type FET Tr1, and the enhancement type FET Tr3 connected to it is driven by the input, and the buffer stage performs the push-pull operation, and connection load becomes unnecessary. Accordingly, the low power consumption input buffer mainly using the enhancement type FET becomes the semiconductor circuit of the SiECL level capable of using -2V as power supply.
申请公布号 JPH02166829(A) 申请公布日期 1990.06.27
申请号 JP19880321830 申请日期 1988.12.20
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MATSUMOTO KAZUYA
分类号 H01L27/095;H01L21/8232;H01L27/06;H03K17/687;H03K19/0185;H03K19/0952 主分类号 H01L27/095
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