| 摘要 |
PURPOSE:To facilitate the handling of a semiconductor device during manufacturing and to reduce the cost through improvement of yield rate by emitting gas from the whole photoresist during patterning before deposition of a metallic layer. CONSTITUTION:When a substrate 11 is irradiated with ultraviolet ray 14 and is exposed to the light with a mask 13 applied after prebaking the substrate on which photoresist 12 is applied, in the exposed part of the photoresist 12, the contained diazonaphtquinone emits nitrogen gas 15, and by the coupling with moisture in the photoresist 12, moisture in the air, etc., it becomes alkali- soluble indenecarboxylic acid. Next, by beta treatment in ammonia gas 18 atmosphere, alkali-soluble indenecarboxylic acid is decarbonated, and emits carbon dioxide 16 and becomes alkali-soluble indene. Next, by whole face exposure with ultraviolet ray 14, the part which was end exposure part is also exposed, and diazonaphthoquinone at the end exposure part is changed into indenecarboxylic acid and is made alkali-soluble, and nitrogen gas 15 is emitted. Next, it is soaked in developing liquid being alkaline aqueous solution so as to remove the alkali-soluble part, and it is developed, thus a specified resist profile 12 can be obtained. |
