Process and apparatus for chemical-vapour deposition using electronic and thermal activation.

摘要

The invention relates to a process and a device for chemical deposition on a substrate, from at least one gas phase containing the elements to be deposited. The process consists in circulating the gas phase successively through two distinct zones, namely a first electronic activation zone (Ze) in which at least a fraction of the gas phase is subjected to an alternating electronic field to ensure the formation of a cold plasma and a second thermal activation zone (Zt) in which is placed a substrate (S) which is heated to a temperature appropriate for bringing about the deposition. The two zones are decoupled both thermally and electrically. The process of the invention, which thus leads to operating the two activation modes separately without significant interaction between them makes it possible to reduce very considerably the process temperatures in the thermal activation zone and to work over a very broad range of pressures. <IMAGE>