| 摘要 |
<p>PURPOSE:To obtain a uniform film resistor by a thick film method by using a resistor which contains an oxide of tungsten (W) as a resistor. CONSTITUTION:For this resistor, a resistor paste of metallic organic substance solution is used which contains, as a resistor material, an organic ligand complex (metallic organic substance) of W, an organic ligand complex (metallic organic substance) of silicon (Si), and in addition, metallic organic substances such as at least one kind between lead (Pb) and bismuth, and, if circumstances require, aluminum, etc. By drying this resistant paste applied on a substrate and baking it at a peak temperature above 600 deg.C in the air or oxidation circumstances in which oxygen is excessive, the resistor is formed. The obtained resistor is a mixture at atom level of tungsten (WOx:normally x=2) being a conductive oxide and other metallic oxide being an insulating oxide, and is a homogeneous film resistor. Accordingly, they act such that the resistance value may be decreased by the conductive oxide such as an oxide, etc., of tungsten and that the resistance value may be increased by the insulating oxide such as Al2O3, etc., thus the resistance value can be controlled by the existence of both.</p> |
