| 摘要 |
PURPOSE:To perform a thermal balance without decreasing the hFE of a transistor by forming a plurality of small bore bases of ultrafine area on the surface of an emitter region. CONSTITUTION:An emitter region 12 formed in a base region 11 is formed in a mesh shape, a base region 11 is exposed at the mesh 16, the base 12 of each mesh 16 is connected to a pectinated base electrode 13. On the other hand, the region 12 is connected to a pectinated emitter electrodes 14 which is extended on the surface. Many small circular bore base exposed parts 15 which are extended from the interior of the region 11 through the region 12 are formed. The exposed parts 15 are formed on the region 12 of the part corresponding to the crossing parts of the mesh, and when the region 12 is diffused, the mesh 16 part and the exposed parts 15 are allowed to remain and formed. The parts 15 exposed on the surface are connected to emitter electrode 14 together with the region 12. |
