| 摘要 |
<p>Disclosed is a method for producing a polycrystalline diamond compact which comprises providing a thermally-stable compact comprising between about 70% and 95% by volume diamond, characterized by a network of interconnected, empty pores dispersed throughout, and containing between about 0.05% and 3% by volume of a catalyst/sintering aid material; and subjecting said thermally-stable compact and a silicon material to a partial vacuum at an elevated temperature for a time adequate for said silicon material to infiltrate into said compact pores. The silicon material has a melting point not above about 1410 DEG C and preferably is a silicon alloy having a melting point range of between about 800 DEG and 1400 DEG C.</p> |
