| 摘要 |
PURPOSE:To increase a resistance value without changing the length and the width of a polycrystalline silicon load by using a silicon oxide layer on the surface of a polycrystalline silicon layer which is selectively exposed as a mask, implanting ions into the polycrystalline silicon, and decreasing the resistance. CONSTITUTION:A non-oxidized layer 13 which is formed on a polycrystalline silicon layer 11 formed on a semiconductor substrate 10 is selectively removed. The surface of the exposed polycrystalline silicon layer 11 is oxidized, and a silicon oxide layer 14 is formed. After the non-oxidized layer 13 is removed, ions are implanted into the polycrystalline silicon 11 with the silicon oxide layer 14 as a mask. Thus the resistance is decreased. In this way, the resistance value of the poly-Si load is decreased without increasing the size, and the thickness can be made thin, in correspondence with the miniaturization of a wiring pattern. Thus, the resistance value of the polycrystalline silicon layer can be made effectively high without changing the length and the width. |
