| 摘要 |
<p>PURPOSE:To form a thin metallic film while controlling film stress to a low stress range with high accuracy by increasing the area of the outside peripheral part, outside a substrate, of a substrate holder. CONSTITUTION:A substrate 3 is interposed between a substrate holder 4 and a back plate 5. The area of the outside peripheral part, outside the substrate 3, of the substrate holder 4 is set up so that it is equal to or larger than the area of the surface of the substrate 3. A substrate bias potential is applied to the substrate holder 4, and, while regulating gas pressure, electric power, and substrate 3 temp., a thin metallic film with low stress is formed by a sputtering method. A substrate D.C. bias. potential can be applied more stably to the surface of the thin metallic film under formation.</p> |
