发明名称 |
Semiconductor capacitor device with dual dielectric |
摘要 |
A semiconductor device having a large-capacitance capacitor in which an insulator film is formed underneath a film made of a material having a high dielectric constant, such as tantalum oxide, in such a manner that a portion of the insulator film underneath a defect region which is undesirably thin is thicker than other portions of the insulator film, thereby preventing occurrence of a failure in terms of dielectric strength and deterioration of the lifetime of the capacitor which would otherwise be caused by the existence of the defect region. Also disclosed is a process for producing such semiconductor device. Thus, it is possible to effectively prevent occurrence of problems which would otherwise be caused when a material having a high dielectric constant, such as tantalum oxide, is employed as a dielectric film of a capacitor, so that the reliability of a semiconductor having a large-capacitance capacitor is greatly improved.
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申请公布号 |
US4937650(A) |
申请公布日期 |
1990.06.26 |
申请号 |
US19880247343 |
申请日期 |
1988.09.21 |
申请人 |
HITACHI, LTD. |
发明人 |
SHINRIKI, HIROSHI;NISHIOKA, YASUSHIRO;SAKUMA, NORIYUKI;MUKAI, KIICHIRO |
分类号 |
H01L27/10;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H01L29/45;H01L29/51;H01L29/92;H01L29/94 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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