发明名称 MOS TRANSISTOR
摘要 PURPOSE:To prevent local deterioration of the breakdown strength of a drain by a constitution wherein diffused layers forming two groups are connected checkerwise with different wirings, and each diffused layer in one group is formed in a polygonal shape having sides facing eight or more sides of a gate electrode. CONSTITUTION:Two groups are formed with diffused layers 2 and 3, respectively. The diffused layers are connected checkerwise with different wirings, respectively. Each diffused layer 2 in at least one group is firmed in a polygonal shape having the sides facing the eight or more sides of a gate electrode 1. In this way, the drain diffused layer 2 and the gate electrode 1 which is formed so as to face the layer 2 are formed in an octagonal shape. Therefore, acute angle parts are not formed in the drain diffused layer 2. The corner parts of the gate electrode are removed so that the gate electric field is hard to concentrate. The local deterioration of the breakdown strength of the drain can be suppressed.
申请公布号 JPH02165678(A) 申请公布日期 1990.06.26
申请号 JP19880321222 申请日期 1988.12.20
申请人 MATSUSHITA ELECTRON CORP 发明人 NAKANO TAKESHI
分类号 H01L29/78;H01L21/8234;H01L27/088;H01L29/06;H01L29/423 主分类号 H01L29/78
代理机构 代理人
主权项
地址