| 摘要 |
PURPOSE:To simplify the manufacturing steps by forming the exposed surface region of a substrate adjacent to a substrate electrode leading region, and simultaneously opening contacting holes for the substrate electrodes and for source and drain electrodes. CONSTITUTION:An element region and a substrate exposed surface region 23 which are surrounded by a field oxidized film 22 are formed on the surface of a p type silicon substrate 21. Then, a gate electrode 25 is patterned through a gate oxidized film 24 on an element region, impurity ions are implanted with the electrode 25 and the film 22 as masks, thereby forming a source region 26 and a drain region 27, and an impurity region 28 which surrounds the substrate electrode leading region is formed under the region 23. Then, an interlayer insulating film 29 is then accumulated on the overall surface, and contacting hole 33 for the substrate electrode is simultaneously formed together with contacting holes 31, 32 for source and drain electrodes with the resist pattern 30 as a mask. |
