| 摘要 |
PURPOSE:To obtain a diffusion layer of Ga and Al having density distribution meeting the purpose of usage by a method wherein a driving process is divided into two and the first half of the process is done under the condition having an outward diffusion-proof film and the second half of the process is done under the condition having no outward diffusion-proof film. CONSTITUTION:In diffusing either of Ga or Al into an Si substrate by a deposition process, the first process is done under the condition that an outward diffusion-proof film of Ga and Al exists on the surface of the Si substrate and the second process is done under the condition that no outward diffusion-proof film exists. If the total time of the first and the second processes is same, diffusion depth becomes almost equal. The more time for the second process increases, the more surface density decreases and the more peak position deepens. |
