| 摘要 |
<p>PURPOSE:To drive a memory through the use of the power source of a low voltage by installing a circuit which boosts a power voltage to the driving voltage of the memory capable of rewriting data and permitting a boosting capacitor which incorporates a switching part to be connectable with outside. CONSTITUTION:Capacitor external connecting terminals t0-t3 are respectively installed in a non-volatile semiconductor device 1 which incorporates the memory that can electrically rewrite data. A boosting capacitor C1 installed in a boosting circuit is externally connected between the capacitor external connecting terminals t0 and t1, and a similar boosting capacitor C2 is externally connected between the capacitor external connecting terminals t2 and t3. Consequently, the boosting circuit switching-operates, charges the capacitors 1 and 2 which are externally connected, and raises pressure. Thus, the memory can be driven by the power voltage lower than the power voltage with which the action of the memory that rewrites data is guaranteed.</p> |
