| 摘要 |
PURPOSE: To completely avoid producing any additional product and/or polymer, to regularly grow an InP layer and to completely avoid incorporating carbon by using cyclopentadienyl indium (I) obtained by freely alkylating a cyclopentadienyl group as a metallic organic indium compound. CONSTITUTION: At the time of introducing a gas mixture containing metallic organic indium compound and phosphide and bringing it into contact with the surface of a heated substrate to form epitaxial indium phosphide layer, cyclopentadienyl indium (I) produced by freely alkylating cyclopentadienyl radical is used as a metallic organic indium compound. The alkylated cyclopentadienyl indium (I) is preferably monoalkyl-cyclopentadienyl indium (I) whose vapor pressure is not less than 0.01mbar at 20 deg.C and of which the number of carbons of alkyl group is four at most. For example, methyl cyclopentadienyl indium (I) in a 50 deg.C evaporation both 57 is evaporated and introduced to a reactor. |
