| 摘要 |
PURPOSE:To further diminish reflected light influence from the surface of a substrate by a method wherein only the surface layer of a second resist film is exposed in a two-layer resist process, focal-point depth at exposure time is further made shallower, it is made possible to manage to weakly expose only the surface layer. CONSTITUTION:After a substrate 10 is coated with a first resist film 11, a second resist film 12, different from the film 11, whose thickness is smaller is applied on this film 11. Only the surface layer of the second resist film 12 is subjected to exposure. Next, by developing this second resist film 12, a predetermined irregular pattern is formed on the surface layer. In comparison with the second resist film 12, etching is performed to the first resist film 11 from the surface layer side in an anisotropic etching process with higher etching speed. As a result, in a two-layer resist process, exposure whose focal-point depth is shallower is made possible, and reflected light influence from the surface of a substrate 10 can be reduced further. |
