| 摘要 |
PURPOSE:To form a peripheral circuit wiring accurately and finely by a method wherein the peripheral circuit wiring connecting peripheral circuit elements with each other is provided crossing the upside of a cell element which forms a memory cell array, and the electrodes of the peripheral circuit elements are connected to the peripheral circuit wiring through the intermediary of a connecting conductor laminated on the electrodes. CONSTITUTION:An Si3N4 film 13 and an SiO2 film 17 covering the upside of a peripheral circuit element 2 are etched to provide a window to an electrode part, and then a tungsten film 7 is deposited thereon through a chemical vapor phase growth method, which is patterned into a connecting conductor 7 connected to the electrode of the peripheral circuit element 2 by the use of a lithography technique to make a connecting electrode large in height. Then, a PSG film 18 is deposited, and then a peripheral circuit wiring 6 of an aluminum wiring connecting the peripheral circuit elements 2 with each other is formed traversing a memory cell element 1. Thereafter, the whole face is covered with a cover insulating film and thus the manufacture of a semiconductor device of this design is completed. |
