| 摘要 |
PURPOSE:To obtain a planar emission semiconductor laser which is close to a point light source by a method wherein a laser ray projecting region of a DBR region formed of a secondary diffractive grating is made narrow. CONSTITUTION:A secondary diffractive grating 7 is formed on the whole face of a wafer excluding an active region. Furthermore, an etching is executed using a stripe mask to form a ridge which penetrates through the active region and the DBR region. Thereafter, an insulating film of an SiO2 film 8 is formed on the whole face of the wafer, and then a window is provided above the ridge of the active region. A Cr/Au 9 is evaporated and then a part of the Cr/Au 9 on the DBR region is separated off to take out a planar emission component. Lastly, the wafer is thinly abraded, and then an AuGe/Ni/Au 10 is evaporated on the rear side. The front and the rear end face are formed through cleavage. The DBR region is 10mum or less in length. Moreover, an SiN film is deposited through a plasma CVD, and then a gold film is deposited on the SiN film to serve as a high reflection film. |
