| 摘要 |
<p>PURPOSE:To deposit electrode films from both sides as well as to form bump electrodes within a short time by a method wherein, in order to form the bump electrodes with electrolytic plating process, a wiring metal and a conductive resin film comprising electrodes in bonding pad parts are used for supplying power. CONSTITUTION:An aluminum pad 12 is formed in inner chip on a semiconductor substrate 11 while an opening is made in the surface of the pad 12 and then a cover film 13 is formed on the whole surface. Next, a power supplying wiring metal 14 and a barrier metal 15 are deposited on the whole surface. Next, after the patterning process to leave the barrier metal 15 on the bonding pad part, a conductive resin film 16 in film thickness of around 20mum is formed on the whole surface. Next, the film 16 is coated with a photoresist film 17 in film thickness of around 10mum and after patterning process, windows are made in the conductive resin layer 16 in the bonding pad part and the power supplying pad part. Finally, the wiring metal 14 and the conductive layer 16 are supplied with power while bump electrodes 20 e.g. gold are deposited up to the film thickness of around 25mum on the bonding pad part and the power supplying pad part with electrolytic plating process to form the thick wall bump electrodes 20.</p> |
