发明名称 METHOD FOR CORRECTING DEFECT OF PHOTOMASK
摘要 <p>PURPOSE:To correct a photomask having defects of intricate shapes by correcting the defects in accordance with exposing data for pattern plotting of a defective pattern part. CONSTITUTION:Unit graphics including the defect 14 are obtd. by collating data 12 on the collation and inspection of the patterns formed from the exposing data 11 for pattern plotting consisting of the set of unit graphics and the defect mask patterns 13. The part corresponding to the unit graphics including the defect is taken out of the exposing data 11 for pattern plotting and the defective photomask 13 is exposed and corrected by the exposing data 15 for defect correction formed by taking out the part corresponding to the unit graphics including the defects from the exposing data 11 for pattern plotting. The correction of the defect having the patterns of the intricate shapes is executed in this way by short-time exposing with the pattern plotting device, by which the process period for the photomask is shortened.</p>
申请公布号 JPH02161434(A) 申请公布日期 1990.06.21
申请号 JP19880316969 申请日期 1988.12.14
申请人 NEC CORP 发明人 KANAMARU TOYOMI
分类号 G03F1/72;H01L21/027 主分类号 G03F1/72
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