发明名称 |
Azido-benzene-sulphonate ester(s) of monomeric, polymeric alcohol(s) - used in photosensitive material, esp. photoresist for IC mfr. |
摘要 |
New azidobenzenesulphonates are of formulae (I), (II), (III), (IVa), (IVb) and (IVc) and new homo- and copolymers contain azidobenzenesulphonate units of formula (V), X is H, 1-5C alkyl, alkoxy, OH, N3 or halogen, R is H or 1-5C alkyl, A is (CH2)n1-, -(CH2)n1-O-(CH2O)n1- (n1 is max. 5), -CH(CH3)(CH2)n2- (n2 is max. 3), -CH2CH(CH3)(CH2)n3 (n3 is max. 2), -C(CH3)2(CH2)n4- (n4 is max. 2) or -CH2C(CH3)2CH2-, B is -(CH2)m1 (m1 is max. 5), -(CH2O)m2-CH2- (m2 is max. 4), -CH(CH3)(CH2)m3 (m3 is max. 3), -CH2CH(CH3)(CH2)m4- (m4 is max. 2), -C(CH3)2(CH2)m5 (m5 is max. 2) or phenylene and D is phen-1,2,3-, 1,2,4- or -1,3,5-triyl, -CH2CH2CHCH2- or CH3C(CH2-)3. The prepn. of (I), (II), (III), (IV) and the (co)polymers is claimed. USE/ADVANTAGE - (I), (II), (III), (IV) and the (co)polymers are claimed for use as or in alkali-soluble negative-type photosensitive materials opt. in conjunction with a binder which is soluble in aq. alkali solns. The films have an absorption coefft. of 0.5-1.5 micron at the 248 nm. wavelength of a KrF excimer laser (claimed) and have high resolution. They are useful in photolithography e.g. as photoresists in the prodn. of semiconductor ICs.
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申请公布号 |
DE3941757(A1) |
申请公布日期 |
1990.06.21 |
申请号 |
DE19893941757 |
申请日期 |
1989.12.18 |
申请人 |
HITACHI CHEMICAL CO., LTD.;HITACHI, LTD., TOKIO/TOKYO, JP |
发明人 |
UENO, TAKUMI, HACHIOJI, JP;TORIUMI, MINORU, KYOTO, JP;NONOGAKI, SABURO, TOKIO/TOKYO, JP;HASHIMOTO, MICHIAKI, SAYAMA, JP;HAYASHI, NOBUAKI, SAITAMA, JP;TADANO, KEIKO, KODAIRA, JP;IWAYANAGI, TAKAO, TOKIO/TOKYO, JP |
分类号 |
C07C309/76;G03F7/008;G03F7/012;H01B5/14;H01B13/00;H01L21/027 |
主分类号 |
C07C309/76 |
代理机构 |
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