发明名称 Sensor for pressure greater than 50 mega Pascals - has silicon chip with aperture connected to boron silicate body
摘要 The high press. sensor consists of a monocrystalline silicon chip (1) with integrated piezoresistive resistors and a counter body (4) connected to the chip. The chip has a through aperture in its central region to cause a hydrostatic press. loading. The counter body consists of a material with a thermal coefficient of expansion approximately the same as that of silicon and has a different elastomechanical constant. The counter body is made of boron silicate glass and is connected to the silicon chip via an anodic base. USE/ADVANTAGE - In process and system automation. Planar technology sensor can be used with pressure in excess of 50 MPa.
申请公布号 DE3940861(A1) 申请公布日期 1990.06.21
申请号 DE19893940861 申请日期 1989.12.11
申请人 VEB GERAETE- UND REGLER-WERKE TELTOW, DDR 1530 TELTOW, DD 发明人 OSCHATZ, ALBRECHT, PROF. DR.SC.TECHN., DDR 8026 DRESDEN, DD;PENZOLD, WOLFGANG, DR.-ING.;WERTHSCHUETZKY, ROLAND, DR.SC.TECHN., DDR 1532 KLEINMACHNOW, DD
分类号 G01L9/00 主分类号 G01L9/00
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