Sensor for pressure greater than 50 mega Pascals - has silicon chip with aperture connected to boron silicate body
摘要
The high press. sensor consists of a monocrystalline silicon chip (1) with integrated piezoresistive resistors and a counter body (4) connected to the chip. The chip has a through aperture in its central region to cause a hydrostatic press. loading. The counter body consists of a material with a thermal coefficient of expansion approximately the same as that of silicon and has a different elastomechanical constant. The counter body is made of boron silicate glass and is connected to the silicon chip via an anodic base. USE/ADVANTAGE - In process and system automation. Planar technology sensor can be used with pressure in excess of 50 MPa.
申请公布号
DE3940861(A1)
申请公布日期
1990.06.21
申请号
DE19893940861
申请日期
1989.12.11
申请人
VEB GERAETE- UND REGLER-WERKE TELTOW, DDR 1530 TELTOW, DD