发明名称 MATRIX ARRAY SUBSTRATE
摘要 <p>PURPOSE:To easily realize the decrease of the resistance of wiring electrodes by forming the lower metal of nonlinear resistance elements of metals of an upper layer and lower layer which are different in specific resistance and covering the exposed surface of the metal in the lower layer of the lower metal with an insulating layer formed by conversion of this metal. CONSTITUTION:The 1st alloy film consisting of Nb-Ta (50:50atomic%) and the 2nd alloy film consisting of Nb-Ta (10:90atomic%) are continuously formed by sputtering on a substrate 10 consisting of borosilicate glass. The two alloy films are respectively patterned to obtain the lower metals 13 and wiring electrodes 14 consisting of the metals of the upper layer part 11 and the lower layer part 12. The surfaces of both the metals 13, 14 are then anodized by an aq. citric acid soln. while the resist is made to remain to obtain insulating layers 15, 16. Both the surfaces 13, 14 are then anodized to obtain the insulator 17 and the ITO film is patterned by sputtering, by which the display picture element electrodes 18 are formed. After the resist is stripped, a Cr film is formed over the entire surface and again the resist patterns are formed. After the Cr film is patterned and etched, the upper metal 19 is formed. The matrix array substrate having the nonlinear resistance elements 29 is thus obtd.</p>
申请公布号 JPH02162328(A) 申请公布日期 1990.06.21
申请号 JP19880316150 申请日期 1988.12.16
申请人 TOSHIBA CORP 发明人 MORITA HIROSHI;ISHIZAWA KEIKO
分类号 G02F1/136;G02F1/1365;H01L49/00 主分类号 G02F1/136
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