| 摘要 |
PURPOSE:To form fine patterns by a simple stage by selectively effecting the photocrosslinking reaction of a resin layer to cause polymn., then treating a substrate in gaseous silane to form a layer contg. Si on the surface of the resin layer in the unexposed part, subjecting the layer to an O2 plasma treatment and dry etching the resin layer of the exposed part with the formed SiO2 layer as a mask. CONSTITUTION:A phenol movolak resin 11 contg. the photocrosslinking agent is laminated on one main plane of the semiconductor substrate 1 and the resin layer 11 is selectively exposed 4 to deposit 12a the Si on the resin layer surface of the unexposed part by the gas contg. monosilane or disilane. The resin layer 12a surface is then oxidized to the SiO2 layer 12b and with the SiO2 layer 12b as an etching mask, the resin layer 11a of the exposed part is removed by O2 plasma etching. The production process is extremely simplified in this way and the formation of the fine patterns is possible. |
