发明名称 |
Method and structure for providing improved insulation in VLSI and ULSI circuits. |
摘要 |
<p>An improved VLSI or ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.</p> |
申请公布号 |
EP0373360(A2) |
申请公布日期 |
1990.06.20 |
申请号 |
EP19890120666 |
申请日期 |
1989.11.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ROBERTS, STANLEY;KAANTA, CARTER WELLING |
分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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