| 摘要 |
PURPOSE:To suppress the mutual action between electrodes by forming the same conductive layer region as a channel layer, and providing the first and second gate metal electrodes to expand a distance between gates on the conductive region. CONSTITUTION:Electrode patterns are formed with a curvature so that the shortest distance of an insulating film between electrodes may become as long as allowable in the performance of an element. Particularly, an n type channel layer 12 is extended out of an active region to form an n type conductive layer region 17, gate electrodes 18, 19 are bent in a curvature on the region 17 to form to extend the distance between the gates. Accordingly, an electric field concentration is prevented. The curvature and the extension of the interval between the gate electrodes 18 and 19 are so set as to increase the shortest distance between the gates on the insulating film in the degree that the mutual action between the first gate electrode 18 and the second gate electrode 19 does not affect the influence to the performance of an FET. |
