| 摘要 |
PURPOSE:To obtain a high moisture-proof device, by forming a wiring of Al, etc. on a semiconductor substrate whereon an element region is provided, covering the other part than a wire bonding region with an insulating film, then connecting a wire to the bonding region, and thereafter changing the wiring part exposed in the periphery thereof into an Al2O3. CONSTITUTION:An SiO2 insulating film 3 is adhered on an Si substrate 1 whereon the element region 2 is provided, an aperture is opened corresponded to the region 2, and the wiring 4 constituted of Al or Al alloy which contacts the region 2 is formed by being extended on the film 3. Next, a surface protection film 6 of SiO2 or SiN is formed over the entire surface, an aperture part 5A to mount the metallic wire 7 is opened, then the back surface of the substrate 1 is fixed on a lead frame 8, and thereafter the wiring 4 exposed to the aperture part 5A is connected to the frame 8 by using the wire 7. Thereafter, with the frame 8 as the anode, anodic formation is performed resulting in the conversion of the surface of the wiring 4 still exposed in the periphery of the wire 7 into a non-porous Al2O3 film 9. |
