InP/GalnAsP double heterostructure laser diode with buried active layer, and method for its production.

摘要

InP/GaInAsP double heterostructure laser diode with buried active layer, and method for its production. The InP/GaInAsP laser diode containing a built-in isolating p-n junction with a double channeled double heterostructure carrier, and a buried active layer built up on an InP substrate, is prepared by using the method of one-step liquid phase epitaxy, wherein on the orientated substrate (1) there are formed two parallel channels (9), between which channels (9) a buried GaInAsP active layer (3a) is arranged, which is confined on all sides by n and p type InP layers with a wide inhibiting zone and a low refractive index. On the substrate (1) there is a n-type InP buffer layer (2) and thereon a further GaInAsP layer (3) with narrow gap and lying at the bottom of the channels (9) and on the planar parts, whereon a further n-type layer (4) is arranged carrying a further n-type current-limiting layer (5), whereon an InP embedding layer (6) is provided on which a GaInAsP contact layer (7) of the p-type is arranged, while this one is covered with a multilayer p-side contact-metal layer (8a), advantageously of Au/Au-Zn , while on the other side of the carrier a n-side contact-metal layer (8b) is directly arranged, preferably consisting of AuGe/Ni/Au.