Manufacturing method of semiconductor laser with non-absorbing mirror structure.

摘要

An InGaA l P NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate (12). The double-heterostructure section includes a first cladding layer (16) of n-type InGaA l P, a non-doped InGaP active layer (80, 18), and a second cladding layer (20) of p-type InGaA l P. An n-type GaAs current-blocking layer (24) having a stripe opening (26) and a p-type GaAs contact layer (32) are sequentially formed on the second cladding layer (20) by MOCVD crystal growth. A low-energy band gap region (18a) is defined in a central region of the active layer (18) located immediately below the stripe opening (26). A high-energy band gap region (18b) is defined in a peripheral region of the active layer (18) corresponding to a light output end portion of the laser and located immediately below the current-blocking layer (24). Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.