| 摘要 |
PURPOSE:To obtain a thermocouple unit which has high sensitivity by combining P type (N type) semiconductor and N type (P type) amorphous semiconductor having large thermocoupling capacity, large conductivity and different polarity of thermocoupling capacity. CONSTITUTION:In a thermocoupling unit 13, a P type (N type) thin amorphous semiconductor film 5 formed partly in contact with a P type (N type) diffused layer 3 forms a hot contact point 12, and ohmic electrodes 7, 8 form a cold contact point, and a DC thermal electromotive force Vth which is proportional to the temperature difference DELTAT between the hot contact point and the cold contact point is generated between the electrodes 7 and 8. The magnitude of the electromotive force Vth depends upon the thermocoupling capacity alphaP(N) of the layer 3, the thermocoupling capacity alpha'N(P) of the film 6 and the temperature difference DELTAT, thereby obtaining the power Vth not less than 0.65mV per temperature difference DELTAT=1 deg.C. |
