| 摘要 |
<p>A semiconductor light detector includes a first semiconductor layer of a first conductivity type having a multi-layer structure including a light absorbing layer and an avalanche multiplicating layer, an annular second semiconductor layer (27) formed on the first semiconductor layer, a light detecting region (29) formed by doping an impurity of a second conductivity type in a surface region of the first semiconductor layer, in such a manner that a peripheral portion of the light detecting region (29) is located outside an inner periphery of the second semiconductor layer (27), the light detecting region (29) defining a first p-n junction in combination with the first semiconductor layer, and a guard ring (28) formed by doping an impurity of the second conductivity type in a surface region of the first semiconductor layer to surround the peripheral portion of the light receiving region with the first semiconductor layer, the second p-n junction having a concentration gradient lower than that of the first p-n junction. By virtue of the presence of the second semiconductor layer (27), the junction depth of the peripheral portion of the light detecting region (29) is less than that of the central portion of the light detecting region (29), and the junction depth of the guard ring (28) is greater than that of the peripheral portion of the light detecting region (29). As a result, a sufficient guard ring effect can be obtained without a guard ring (28) having a great junction depth.</p> |
