| 摘要 |
PURPOSE:To make the intervals between bonding lends and a semiconductor IC pellet narrow even in case the number of the pads of the pellet is large and to dispense with the large area of a semiconductor chip by a method wherein one bonding land is ready-formed into an unseparated annular thick film in the first place and after a bonding is performed, the bonding land is separated and cut into each land by a laser. CONSTITUTION:An annular thick film 2 is formed on a ceramic substrate 1, a wiring pattern 3 is connected to this film 2 and a mounting land 4 is formed in the interior of the film 2. A semiconductor IC pellet 5 is bonded and fixed on the land 4 with a bonding agent 6. Then, after a wire bonding is performed on the film 2 using Au wires 7 at a position correspond to the pattern 3, the land 4 is cut and separated into each bonding land 2A by a laser. Thereby, even it the number of pads of the pellet is increased, the area of a semiconductor chip can be made small and a reduction in the size of a semiconductor device can be contrived. |
