| 发明名称 |
Method of making a semiconductor-insulator-semiconductor structure |
| 摘要 |
A semiconductor epitaxial device structure is described in which there are alternate single crystal layers of semiconductor, insulator and semiconductor. A typical example is InP/CaF2/InP. A process for producing such a structure is also described.
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| 申请公布号 |
US4935382(A) |
申请公布日期 |
1990.06.19 |
| 申请号 |
US19880265175 |
申请日期 |
1988.10.31 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
JOHNSTON, JR., WILBUR D.;TU, CHARLES W. |
| 分类号 |
H01L21/20;H01L21/314;H01L29/267 |
主分类号 |
H01L21/20 |
| 代理机构 |
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