| 摘要 |
<p>PURPOSE:To facilitate the micronization of a resistor pattern and to enable the miniaturization of a resistor element of this design by a method wherein a silicon thermal oxide film formed on a silicon base substrate and a pattern forming tantalum thin film resistor formed on the thermal oxide film are provided. CONSTITUTION:A silicon thermal oxide film 2 is formed on the primary face of a silicon substrate 1, and a nitrogen doped tantalum film 3 of a tantalum thin film doped with nitrogen is formed on the silicon thermal oxide film 2. In succession, a film 4 composed of NiCr/Pd/Au is formed through a magnetron sputtering method, which is patterned to form a lead-out electrode 5, and then the tantalum film 3 under the film 4 is patterned into a specified form for the formation of a tantalum thin film resistor 6. As mentioned above, the surfaces of a silicon base substrate and a thermal oxide film are smooth, so that the tantalum thin film resistor film can be easily formed into a micronized pattern and miniaturized.</p> |
