| 摘要 |
PURPOSE:To obtain an SiC film generating no stress variation even for high energy irradiation by a method wherein tensile stress is brought down to the specific value or below and hydrogen is not contained substantially. CONSTITUTION:Si is used for a substrate, room temperature is sufficient for the substrate temperature, but 500 deg.C or lower is desirable taking into consideration of the film quality of mixture of impurities and the like. The power density applit to a target is in the range of 5W/cm<2> or more, and tensile stress is controlled at 5X10<9>dynes/cm<2> or less. Under the above-mentioned film-forming condition, the tensile strength, which is the threshold stress with which film is not broken, is controlled at 5X10<9>dynes/cm<2> or less on the SiC film obtained on the surface of the Si substrate, and as a result of the analysis on infrared ray absorption spectrum, it has been proved that the SiC film contains no hydrogen, it has no film defect such as pin holes and the like, it can be brought into the state of membrane, and it endures the irradiation with a high energy beam. As above-mentioned, an SiC film having no variation in stress even against the irradiation with a high energy beam can be obtained. |
